the critical dimension

A method for improving the critical dimension uniformity of a patterned feature on a wafer in semiconductor and mask fabrication is provided.

一种在半导体与罩幕制造中改善晶圆上的图案化特征结构的临界尺寸均匀性的方法。

The result shows that, the critical point of the Gauss model depends not only on the spatial dimension of the system, but also on the coordination number of the site.

结果表明，系统的临界点不仅与空间维数有关，还与晶格格点的配位数有关；

The model was analyzed and established, then the formula of critical dimension was got, which was related to the temperature distribution of heater tip.

根据传热学建立了脉冲热压焊的焊咀温度分布模型，对该模型进行分析、计算，得到了焊咀端部温度分布是否分布均匀的临界尺寸公式。